Material including boron suboxide and method of forming same

ABSTRACT

A material including a body including B 6 O X  can include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90≤X≤1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of B 6 O X .

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional application of and claims priorityunder 35 U.S.C. § 120 to U.S. patent application Ser. No. 16/396,582,entitled “MATERIAL INCLUDING BORON SUBOXIDE AND METHOD OF FORMING SAME,”by Brian C. LaCourse, filed Apr. 26, 2019, which claims priority under35 U.S.C. § 119(e) to U.S. Provisional Application No. 62/663,933,entitled “MATERIAL INCLUDING BORON SUBOXIDE AND METHOD OF FORMING SAME,”by Brian C. LaCourse, filed Apr. 27, 2018, all of which are assigned tothe current assignee hereof and incorporated herein by reference intheir entireties.

FIELD OF THE DISCLOSURE

The present invention is directed to a material including boron suboxideand methods of forming the same.

DESCRIPTION OF THE RELATED ART

Boron suboxide is a chemically inert, super hard material, with arelatively low mass density that can be used as an abrasive grit forpolishing and grinding metals and in the formation of dense ceramicmaterials. Synthesizing boron suboxide to have the proper chemistry andproperties is an extremely difficult task and has traditionally hadlimited success.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure may be better understood, and its numerousfeatures and advantages made apparent to those skilled in the art byreferencing the accompanying drawings.

FIG. 1 includes a flowchart illustrating a process in accordance with anembodiment.

FIG. 2 includes a schematic illustrating a portion of an apparatus inaccordance with an embodiment.

FIG. 3 includes a schematic illustrating crystalline structure ofstoichiometric B₆O.

FIG. 4 includes a cross-sectional illustration of a portion of an armorcomponent in accordance with an embodiment.

FIG. 5 includes a cross-sectional illustration of a portion of an armorcomponent in accordance with another embodiment.

DETAILED DESCRIPTION

Embodiments are drawn to a process for forming a material including abody including a boron suboxide. As used herein, boron suboxide isintended to refer to B₆O_(X). The process may facilitate the formationof B₆O_(X) having improved features, including but not limited to,stoichiometry, purity, particular crystallographic features, hardness,ballistic capabilities, size and shape. For instance, in the context ofthe stoichiometry, “X” can be at least 0.85 and at most 1.1. In aparticular embodiment, “X” can be at least 0.90.

Other embodiments are drawn to the material formed via the processincluding a body including B₆O_(X). The body can include improvedhardness, purity, density, volume, thickness, or any combinationthereof. In some instances, the material can be suitable for forming anarmor component.

FIG. 1 includes a flowchart illustrating a process 100 for forming thematerial. At block 101, the process can start with forming B₆O_(X)powder, which can include mixing raw materials including boron powderand boron oxide (B₂O₃) powder. In an embodiment, the boron powder caninclude amorphous boron and have a purity of at least 96% or at least98%. In some instances, boron powder may include one or more impurities,which may be materials unintentionally included in the boron powder. Anexample of such an impurity may include a metal element, a metalloidelement, a compound, or any combination thereof, and the total amount ofthe impurities can be at most 4 wt % or at most 3 wt % or at most 2 wt %of a total weight of the boron powder. The metal element can include analkaline earth element, such as Mg. An exemplary metalloid element caninclude Si. In some instances, boron powder may include a trace amountof B₂O₃. In another embodiment, the B₂O₃ powder can include crystallineboric anhydride and have a purity of at least 99% or at least 99.5% oreven at least 99.9%.

In an embodiment, the boron powder and B₂O₃ powder can be mixed at aparticular ratio to facilitate formation of B₆O_(X) powder. Forinstance, the mixing ratio of boron powder to B₂O₃ powder (by mass) canbe at least 2.20, such as at least 2.30, at least 2.40, at least 2.45,at least 2.50, at least 2.60, or at least 2.70. In another instance, themixing ratio of boron powder to B₂O₃ powder (by mass) can be at most2.80, at most 2.70, at most 2.60, or at most 2.50. It is to beunderstood that the mixing ratio can be in a range including any of theminimum and maximum values noted herein. In a particular instance, theratio of boron powder to B₂O₃ powder can be 2.48. In another particularinstance, the ratio of boron powder to B₂O₃ powder (by mass) can beadjusted to 2.70 taking into consideration of some B₂O₃ contamination inthe boron powder. In at least one embodiment, prior to mixing the boronand B₂O₃ powders, B₂O₃ powder may be subjected to a milling process toobtain a smaller average particle size (i.e., d₅₀). For example, B₂O₃powder may be ball milled to have the average particle size of at most150 microns, at most 140 microns, at most 135 microns, or even at most125 microns. Smaller particle size may help to increase the surface areaand reactivity of the B₂O₃ powder, which can allow a better reaction tooccur between the boron and B₂O₃.

In an embodiment, mixing the raw materials can be performed to form amixture having a homogenous dispersion of the components. In an aspect,a mixer can be used to facilitate mixing the raw materials, such as aplanetary mixer, speed mixer, ultrasonic mixing, or an acoustic mixer.In particular instances, an acoustic mixer may be used. In anotheraspect, a grinding media, such as tungsten carbide or yttria-stabilizedzirconia balls, may be added to the raw materials to facilitateformation of a homogenous mixture of the raw materials. A sieve may beused to separate the grinding media from the mixture after mixing iscompleted.

In an embodiment, forming the B₆O_(X) powder can further include heatingthe mixture. Heating can be conducted in a furnace, and the mixture canbe placed in a crucible. The crucible can include an inert material,such as boron nitride.

In an embodiment, heating can be conducted in an inert atmosphere, suchas in an argon atmosphere. In another embodiment, heating can beconducted at a particular temperature that can facilitate formation ofimproved B₆O_(X) powder. For example, the temperature can be at least500° C., such as at least 600° C. In another instance, the temperaturecan be at most 1700° C., such as at most 1500° C. or at most 1400° C.Moreover, the heating temperature can be within a range including any ofthe minimum and maximum values noted herein, such as in a range from600° C. to 1400° C.

In a particular exemplary implementation, heating can be conductedincluding a first heating temperature and a second heating temperature.For instance, the furnace temperature can be ramped up to a firsttemperature of at least 500° C. or at least 600° C., and at most 800°C., at which the mixture can be heated for a first period of time. In afurther instance, the first period of time can be at least 15 minutes,at least 20 minutes, or at least 30 minutes. In another instance, thefirst period of time may be at most 60 minutes. The temperature of thefurnace can then be increased to a second temperature. For example, thesecond temperature can be at least 1200° C. or at least 1300° C. or atleast 1400° C. In another instance, the second temperature can be atmost 1600° C. or at most 1500° C. or at most 1400° C. Moreover, thesecond temperature can be in a range including any of the minimum andmaximum values noted herein. The mixture can be heated at the secondtemperature for a second period of time, such as at least 50 min and atmost 80 min. In a further instance, the ramp rate can be at least 4°C./min and at most 25° C./min. The furnace can be allowed to cool downafter heating is completed. B₆O_(X) powder can be formed. In particularinstances, pressure may not be needed during the heating process.

In one embodiment, the B₆O_(X) powder can be milled and sieved to obtaina uniform average particle size, such as having a d₅₀ in a range from0.1 microns to 1 micron. In another embodiment, the B₆O_(X) powder canhave a purity of at least 95%, such as at least 96% or at least 97% orat least 98%. In a particular embodiment, the B₆O_(X) powder may notinclude an impurity that has not been present in the raw materials.

At block 102, the process 100 can continue by forming the B₆O_(X) powderinto a material including a body. In an embodiment, forming the materialcan include applying a pressure, or a heat, or both to the B₆O_(X)powder. For instance, forming the material including a body can beconducted in an apparatus that can allow heating and pressing to beperformed, such as a hot press. FIG. 2 includes an illustration of aportion of an apparatus 200 including a mold 201, a first pressingelement 204, and a second pressing element 206. A tapered sleeve 214 canbe disposed against an inner surface 214 of the mold 201. The mold 201and the tapered sleeve 214 can include graphite. The inner surface 202of the tapered sleeve 214 defines a chamber, where pressing, heating, orboth can be performed. As illustrated, the second pressing element 206can be axially aligned with the first pressing element 204. In oneembodiment, the apparatus 200 may include a single pressing element,such as one of the first and second pressing elements, 204 and 206. Thefirst and second pressing elements 204 and 206 can include a materialthat can withstand the process, such as a refractory metal or ceramic(e.g., boron nitride) or graphite or any combination thereof. In aparticular embodiment, the first and second pressing element can be madeof graphite. The material of the first and second pressing elements 204and 206 may be the same or different.

The apparatus 200 can further include a first spacer 205 adjacent abottom surface of the first pressing element 204, and a second spacer207 adjacent an upper surface of the second pressing element 206. Thedistance between the first and second spacers 205 and 207 can beadjusted to form bodies having different thickness. In a pressingoperation, the first pressing element 204 and the second element 206 canpush uniaxially toward each other such that the first pressing element204 can come into contact with the first spacer 205, the second pressingelement 206 the second spacer 207. In an embodiment, the first andsecond spacers 205 and 207 can include a heat resistant material, whichcan be the same as the material that forms the pressing elements. Forexample, both spacers can include graphite. In one embodiment, theapparatus 200 can include a third spacer, which can allow simultaneousformation of two bodies of the material. After reading this disclosure,a skilled artisan would understand more than three spacers may be usedin the apparatus 200 to allow formation of more bodies at the same time.

As illustrated, a barrier film 203 can be disposed along an innersurface 202 of the sleeve 215. The barrier film 203 can be in directcontact with the inner surface 202. In an embodiment, the barrier film203 can be disposed over an entire inner surface area of the mold 201.In a further embodiment, the peripheral surfaces of the first and secondspacers 205 and 207 can be in direct contact with the barrier film 203.Particularly, air gaps between the peripheral surfaces and the barrierfilm 203 and between the barrier film 203 and the inner surface 202 ofthe mold 201 can be minimized to the extent possible to allow thespacers 205 and 207 to fit snugly into the mold 201. In a furtherembodiment, the barrier film 203 can include a metal element, such as atransition metal element selected from Groups 4 to 12 of the periodictable published by IUPAC on Nov. 28, 2016. In a particular aspect, thebarrier film 203 can include tantalum. In another particular aspect, thebarrier film 203 can include a metal foil, such as a tantalum foil. In amore particular aspect, the barrier film can consist essentially of atantalum foil. In another embodiment, the barrier film can have aparticular thickness that can facilitate improved formation andstoichiometry of a body including B₆O_(X) and improved properties of thebody including B₆O_(X). For instance, the barrier film 203 can have athickness of at least 45 microns, such as at least 50 microns, at least60 microns, at least 70 microns, or at least 75 microns. In anotherinstance, the barrier film 203 can have a thickness of at most 100microns, such as at most 90 microns, at most 85 microns, or at most 80microns, or at most 78 microns. Moreover, the barrier film 203 caninclude a thickness in a range including any of the minimum and maximumvalues noted herein, such as in a range from 45 microns to 100 micronsor in a range from 70 microns to 80 microns.

As illustrated in FIG. 2, the barrier film 203 can extend along aperipheral surface of the first spacer 205 and at least a portion of theperipheral surface of the first pressing element 204. In an embodiment,the barrier film 203 can be disposed such that the entire peripheralsurface area of the first spacer 205 can be isolated from othercomponents by the barrier film 203. In another embodiment, the barrierfilm 203 can be disposed underlying the bottom surface of the firstspacer 205. In a particular embodiment, the entire bottom surface areaof the first spacer 205 is covered by the barrier film 203. The barrierfilm 203 can also extend along a peripheral surface of the second spacer207 and at least a portion of the peripheral surface of the secondpressing element 206. In an embodiment, the barrier film 203 can bedisposed such that the entire peripheral surface area of the secondspacer 207 can be isolated from other components by the barrier film203. In another particular embodiment, and the barrier film 203 can bedisposed overlying the upper surface of the second spacer 207 and moreparticularly covering the entire upper surface area of the second spacer207. In yet another embodiment, the entire inner surface 202 can beisolated from the components of the apparatus 200 by the barrier film203. In a further embodiment, the barrier film 203 can be in directcontact with the first and second pressing elements 204 and 206 andspacers 205 and 207. In one embodiment, an additional spacer, when usedin the apparatus 200, can be wrapped with the barrier film 203 such thatthe peripheral surface area and the upper and bottom surface areas areisolated from other components by the barrier film 203.

As illustrated in FIG. 2, a layer 210 of the B₆O_(X) powder can bedisposed between the first and second spacers 205 and 207. In aparticular implementation, a sintering aid is not added to the layer 210of the B₆O_(X) powder. In at least one embodiment, a sealant layer 208can be disposed between the B₆O_(X) powder layer 210 and the barrierfilm 203 underlying the first spacer 205. In an aspect, the sealantlayer 208 can be in direct contact with the barrier film 203. In afurther embodiment, an additional sealant layer 209 can be disposedbetween the B₆O_(X) powder layer 210 and the barrier film 203 overlyingthe second spacer 207. The sealant layer 209 can be in direct contactwith the barrier film 203. In one embodiment, an additional layer can bedisposed between a sealant layer and the barrier film or between asealant layer and the B₆O_(X) powder layer. For instance, asillustrated, the release layers 211 and 212 can be disposed between theB₆O_(X) powder layer 210 and the sealant layer 208 and between thesealant layer 209 and the B₆O_(X) powder layer 210, respectively. In anaspect, the release layers 211 and 212 can be in the form of a tape. Ina further aspect, the release layers 211 and 212 can help to prevent thematerial of the sealant layer from contaminating the B₆O_(X) powderduring the pressing operation.

In a further embodiment, a release layer 213 can be applied such thatthe barrier film 203 can be separated from the layer 210, which mayfurther facilitate removal of the finally formed body from the mold 201.In an aspect, the release layer 213 can extend along a thickness of thelayer 210 and over an entire peripheral surface area of the layer 210.In another aspect, the release layer 213 may extend over at least aportion or all of the peripheral surface area of the release layer 211,212, or both. In still another aspect, the release layer 213 may extendat least partially over the peripheral surface area of the sealant layer208, 209 or both. In a further aspect, the release layer 213 can extendover the entire surface area of the barrier film 203. In still anotheraspect, the release layer 213 can be in direct contact with the B₆O_(X)powder layer 210, the sealant layer 208 and 209, or any combinationthereof.

In an embodiment, the sealant layer (208, 209, or both) and the releaselayer (any or all of 211, 212, and 213) can include the same material.In an aspect, the material can include an element common to the B₆O_(X)powder. For instance, the release layer and the sealant layer caninclude boron. In a further aspect, the release layer and the sealantlayer can include a nitride. In a particular aspect, the release layerand the sealant layer can include boron nitride, or more particularly,can consist essentially of boron nitride.

In another embodiment, the same material can be present in the differentform in the sealant layer than in the release layer. In a particularaspect, the sealant layer 208 and 209 can include boron nitride powder.In another aspect, boron nitride particles may facilitate formation of aseal around the B₆O_(X) powder layer, which may help to prevent apotential contaminating element from going into the B₆O_(X) powder andan element (e.g., boron) of B₆O_(X) from escaping during the pressing orheating operation. In a further aspect, the boron nitride particles canhave a particular average particle size that can facilitate sealing theB₆O_(X) powder layer. For instance, boron nitride can have an averageparticle size (d₅₀) of at least 5 microns, at least 6 microns, at least7 microns, at least 8 microns, or at least 10 microns. In anotherinstance, the average particle size of boron nitride can be at most 30microns, at most 28 microns, at most 25 microns, at most 22 microns, atmost 20 microns, at most 18 microns, or at most 15 microns. In stillanother instance, boron nitride can have an average particle size in arange including any of the minimum and maximum values noted herein, suchas in a range including at least 5 microns and at most 30 microns or ina range from 8 microns to 15 microns.

A sufficient amount of boron nitride powder can be used to reach athickness that can facilitate sealing performance of the sealant layer.For example, the sealant layer 208 and 209 can have a thickness of atleast 3 mm, such as at least 4 mm, at least 5 mm, at least 6 mm, or atleast 7 mm. In another instance, the sealant layer 208 and 209 can havea thickness of at most 10 mm, such as at most 9 mm, at most 8 mm, or atmost 7 mm. Moreover, the thickness of the sealant layer 208 and 209 canbe in a range including any of the minimum and maximum values, such asin a range from at least 3 mm to at most 10 mm.

In an embodiment, the release layers 211 and 212 can be a release tape,which may be formed via screen printing, freeze-casting process, a tapecasting process, or the like. For instance, a mixture including boronnitride, ethanol, acetone, and a binder material (e.g., PVB) can be usedto form a release tape using a conventional tape casting process.

In another embodiment, the release layer 213 may be formed using thesame mixture used to form the release layers 211 and 212. In anotherembodiment, the release layer 213 can be applied by brushing, spraying,or using a similar process to the peripheral surface of the B₆O_(X)powder layer 210. Alternatively, the release layer 213 can be applied tothe barrier film 203 to prevent direct contact between the barrier film203 and the layer 210. In a further aspect, the layer 210 can be placedin the mold 201 after the applied release layer 213 is dried. In anotheraspect, the release layer (any or all of 211, 212, and 213) can have aparticular thickness that can facilitate improved formation andproperties of the body, such as in a range from 0.1 mm to 1 mm or in arange from 0.2 mm to 0.5 mm.

In a particular embodiment, the process 100 can include applying a heatand pressure to the B₆O_(X) powder layer 210. For instance, the processcan include hot isostatic pressing, hot pressing, or the like. Inanother particular embodiment, the apparatus 200 can be a hot press. Inan aspect, heating can be conducted at an atmosphere of vacuum, an inertgas, such as argon, or a combination thereof. In another aspect, heatingcan be conducted at a first temperature from 400° C. to 800° C. for afirst period of time, such as 15 minutes to 60 minutes, followed by asecond temperature from 1000° C. to 2400° C., for a second period oftime from 15 minutes to 6 hours. In a further aspect, a particularpressure can be applied to the layer 210 to facilitate improvedformation of the body including B₆O_(X). For example, the pressure canbe at least 10 MPa or at least 15 MPa or at least 20 MPa. In anotherinstance, the pressure can be at most 100 MPa or at most 80 MPa or atmost 70 MPa or at most 60 MPa or at most 50 MPa or at most 40 MPa or atmost 30 MPa. Moreover, the pressure can be in a range including any ofthe minimum and maximum values noted herein, such as in a range from 10MPa to 100 MPa or in a range from 15 MPa to 40 MPa.

In an exemplary pressing operation, the assembly illustrated in FIG. 2can be formed as follows. The inner surface 202 of the mold 201 can belined with the barrier film 203, which can help to prevent reactionbetween the B₆O_(X) powder and the inner surface and to seal the B₆O_(X)powder (e.g., by reducing the likelihood of boron escaping from theB₆O_(X) powder during the pressing or heating process). A thin releaselayer 213 can be coated on the surface of the barrier film 203 tofacilitate removal of the finally formed material body. Then the secondpressing element 206 can be disposed at the bottom of the chamber, andthe second spacer 207 placed over the pressing element 206. A barrierfilm 203 can be disposed on the second spacer 207, and a sufficientamount of boron nitride powder can be disposed directly onto the barrierfilm 203 over the second spacer 207 to form a sealant layer 209. Arelease tape 212 can be disposed on the sealant layer 209, on which theB₆O_(X) powder can be loaded. Another release tape 211 can be placedover the B₆O_(X) powder, followed by a sealant layer 208. A furtherbarrier film 203 can be placed over the sealant layer 208 before thefirst spacer 205 and pressing element 204 can be placed. The assemblycan then be loaded into a hot press furnace for a sintering operation.The furnace temperature can be ramped up to 600° C. at a rate of 4°C./min and held at 600° C. for 30 min in a vacuum atmosphere with anapplied pressure of 1.3 MPa. Then the temperature can be ramped up to1200° C. at a rate of 10° C./min in the same atmosphere and under thesame pressure. The atmosphere can be switched to argon and pressure of24 MPa when the temperature reaches 1200° C. and is further increased to2000° C. The temperature and pressure can be held for 30 min, and thenthe pressure can be removed and the furnace cool down to roomtemperature (20 to 25° C.) at a rate of 10° C./min. The materialincluding a body including B₆O_(X) can be formed.

In an embodiment, the material can include an improved stoichiometry.The stoichiometry of B₆O_(X) can be analyzed by using X-ray diffraction,and the value of X can be determined based on the values of latticeconstants a and c. FIG. 3 includes a schematic illustrating thecrystalline structure of stoichiometric B₆O including lattice constant a301 and lattice constant c 302.

As used herein, X of B₆O_(X) is an average of Xa and Xc and determinedby the formula, X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347,Xc=(C−12.410)/(−0.10435), A represents the value of lattice constant a,and C represents the value of lattice constant c. The formulas fordetermining X, Xa, and Xc are described by Hubert, H., et al.,“High-Pressure, High-Temperature Synthesis and Characterization of BoronHigh-Pressure, High-Temperature Synthesis and Characterization of BoronSuboxide” Chemistry Materials, 10, 1530-1537 (1998), which isincorporated by reference herein in its entirety and referred to as“Hubert” hereinafter.

In an embodiment, the B₆O_(X) can have a particular value (A) of latticeconstant a. For instance, A can be at least 5.378, at least 5.379, atleast 5.380, at least 5.381, at least 5.382, at least 5.383, such as atleast 5.384, at least 5.385, at least 5.386, at least 5.387, at least5.388, at least 5.389, at least 5.390, at least 5.391, at least 5.392,at least 5.393, at least 5.394, at least 5.395, at least 5.396, at least5.397, at least 5.398, at least 5.399, at least 5.400, or at least5.401. In another embodiment, A can be at most 5.412, at most 5.411, atmost 5.410, at most 5.409, at most 5.408, at most 5.407, at most 5.406,at most 5.405, at most 5.403, or at most 5.402. It is to be understoodthat A can be in a range including any of the minimum and maximum valuesnoted herein, such as in a range from 5.378 to 5.412 or in a range from5.383 to 5.412.

In an embodiment, the B₆O_(X) can include a particular value (C) oflattice constant c, such as at most 12.321, at most 12.320, at most12.319, at most 12.318, at most 12.317, at most 12.316, at most 12.315,at most 12.314, at most 12.313, at most 12.312, at most 12.311, at most12.310, at most 12.309, at most 12.308, or at most 12.307. In anotherembodiment, lattice constant c can be at least 12.295, at least 12.296,at least 12.297, at least 12.298, at least 12.299, at least 12.300, atleast 12.301, or at least 12.302. It is to be understood that C can bein a range including any of the minimum and maximum values noted herein,such as in a range from 12.295 to 12.321 or in a range from 12.295 to12.318. In a particular embodiment, the B₆O_(X) can include C of at most12.318 and A of at least 5.383. In a more particular embodiment, theB₆O_(X) can include C in a range from 12.295 to 12.318 and A from 5.383to 5.412.

In an embodiment, the B₆O_(X) can have a particular Xa, such as at least0.85, at least 0.87, at least 0.88, or at least 0.89, at least 0.90, atleast 0.91, at least 0.92, at least 0.93, at least 0.94, at least 0.95,at least 0.96, at least 0.97, at least 0.98, or at least 0.99. Inanother embodiment, Xa can be at most 1.1, or at most 1.08, at most1.05, at most 1.02, or at most 1.0, or at most 0.99. Moreover, Xa can bein a range including any of the minimum and maximum values noted herein,such as in a range from 0.85 to 1.1, or in a range from 0.9 to 1.1.

In an embodiment, the B₆O_(X) can include a particular Xc, such as atleast 0.85, at least 0.87, at least 0.88, or at least 0.89, at least0.90, at least 0.91, at least 0.92, at least 0.93, at least 0.94, atleast 0.95, at least 0.96, at least 0.97, at least 0.98, or at least0.99. In another embodiment, Xc can be at most 1.1, or at most 1.08, atmost 1.05, at most 1.02, or at most 1.0, or at most 0.99. Moreover, Xccan be in a range including any of the minimum and maximum values notedherein, such as in a range from 0.85 to 1.1, or in a range from 0.9 to1.1. In a particular embodiment, each of Xa and Xc can be in a rangefrom 0.85 to 1.2, or in a range from 0.9 to 1.1.

In an embodiment, X of the B₆O_(X) can be at least 0.85, at least 0.86,at least 0.87, at least 0.88, at least 0.89, at least 0.90, at least atleast 0.91, or at least 0.92, or at least 0.93, or at least 0.94, or atleast 0.95, or at least 0.96, or at least 0.97, or at least 0.98, or atleast 0.98, or at least 0.99, or at least 1.0. In another embodiment, Xcan be at most 1.1, at most 1.08, at most 1.0, at most 0.99, at most0.98, at most 0.97, at most 0.96, or at most 0.95. It is to beunderstood that X can be in a range including any of the minimum andmaximum values noted herein, such as in a range from 0.85 to 1.1 or in arange from 0.9 to 1.1.

In an embodiment, the material can include a polycrystalline phaseincluding B₆O_(X). In a further embodiment, the polycrystalline phasecan be present in a particular content that can facilitate improvedproperties and performance of the material. For example, thepolycrystalline phase can have a content of at least 85 vol % for thetotal volume of the material, at least 90 vol %, at least 91 vol %, atleast 92 vol %, at least 93 vol %, at least 94 vol %, at least 95 vol %,at least 96 vol %, at least 97 vol %, at least 98 vol %, or at least 99vol % for the total volume of the material. In one embodiment, thematerial may include a phase other than the polycrystalline phase, suchas an amorphous phase. The amorphous phase may be present in a contentof at most 10 vol % for a total volume of the material, such as at most9 vol % or at most 8 vol % or at most 7 vol % or at most 6 vol % or atmost 5 vol % or at most 4 vol % or at most 3 vol % or at most 2 vol % orat most 1 vol % of an amorphous phase for a total volume of thematerial. In a particular embodiment, the material may be essentiallyfree of an amorphous phase. In another particular embodiment, thematerial can consist essentially of a polycrystalline phase includingB₆O_(X). In a further particular embodiment, the polycrystalline phasecan consist essentially of B₆O_(X).

In an embodiment, the material can include a particular content ofB₆O_(X) that can facilitate improved properties and performance of thematerial. For example, the material can include at least 90 vol %B₆O_(X) for a total volume of the body or at least 91 vol % or at least92 vol % or at least 93 vol % or at least 94 vol % or at least 95 vol %or at least 96 vol % or at least 97 vol % or at least 98 vol % or atleast 99 vol % of B₆O_(X) for a total volume of the material. In aparticular embodiment, the material can include a monolithic body. Inanother particular embodiment, the material can consist essentially ofB₆O_(X).

In one embodiment, the material can include a compound including anelement other than boron and other than oxygen. Such compound may bepresent in a content of at most 5 wt % for a total weight of thematerial, such as at most 4 wt % or at most 3 wt % or at most 2 wt % forthe total weight of the material. The compound may be resulted from animpurity carried by the raw materials (e.g., boron powder), such as Mgor Si. In an embodiment, the material may not include an intentionallyadded compound or sintering aid, such as SiO₂. In a further embodiment,the material is essentially free of carbides, nitrides, borides, or anycombination thereof. In another embodiment, the material can beessentially free of alkaline elements, transition metal elements, rareearth elements, or any combination thereof. In a particular embodiment,the material may not include a carbide, nitride, boride, an alkalineelement, a transition metal element, a rare earth element, or anycombination thereof.

In an embodiment, the material can include a density, such as aparticular percent of theoretical density. For instance, the percent oftheoretical density can be at least 91%, or at least 92%, or at least93%, or at least 94%, or at least 95%, or at least 96%, or at least 97%,or at least 98%, or at least 99%.

In another embodiment, the material can include an average density of atleast 2.20 g/cm³ or at least 2.30 g/cm³ or at least 2.40 g/cm³ or atleast 2.45 g/cm³ or at least 2.50 g/cm³ or at least 2.55 g/cm³. Inanother embodiment, the average density may be at most 2.70 g/cm³ or atmost 2.65 g/cm³ or at most 2.63 g/cm³ or at most 2.60 g/cm³. Moreover,the average density may be in a range including any of the minimum andmaximum values noted herein, such as in a range from 2.50 g/cm³ to 2.63g/cm³. An average density is intended to refer to an average of thedensity measurements of at least 3 statistically relevant regions of thematerial.

In an embodiment, the material can include a Knoop hardness at 100 g ofat least 2700 kg/mm², at least 2800 kg/mm², at least 2900 kg/mm², atleast 3000 kg/mm², or at least 3100 kg/mm². In another embodiment, theKnoop hardness at 100 g of at most 4500 kg/mm², at most 4200 kg/mm², atmost 4000 kg/mm², at most 3900 kg/mm², at most 3800 kg/mm², at most 3700kg/mm², at most 3600 kg/mm², at most 3500 kg/mm², or at most 3400kg/mm². It is to be understood that the material can have a Knoophardness at 100 g including any of the minimum and maximum values notedherein, such as in a range from 2700 kg/mm² to 4200 kg/mm².

In an embodiment, the material can be formed having a particulardimension. For instance, the material can include a body having alength, a width, and a thickness, and wherein length>width and thewidth>thickness. The length, width, and thickness of the body may bedetermined by the application of the material. In a further embodiment,the length can be at least 10.5 cm or at least 11 cm or at least 12 cmor at least 15 cm or at least 18 cm. In some instances, the length maybe at most 50 cm or at most 45 cm. It is to be understood that thelength of the body can be in a range including any of the minimum andmaximum values noted herein. In some other applications, the length ofthe body may be greater than 50 cm.

In an embodiment, the width of the body can be at least 10.0 cm, or atleast 10.5 cm or at least 11 cm or at least 12 cm or at least 15 cm orat least 18 cm. In some applications, the width can be at most 50 cm.Moreover, the width of the body can be in a range including any of theminimum and maximum values noted herein. In at least one embodiment,width can include a diameter. In another embodiment, the body may have acylindrical shape.

In a further embodiment, the body can have a particular thickness. Incertain applications, thinner body may be desired. For instance, thethickness may be at most 12 mm, such as at most 11 mm or at least 10 mmor at most 8 mm or at most 7 mm or at most 6 mm or at most 5 mm, and atleast 2 mm. In other applications, the thickness may be greater than 12mm, such as at least 15 mm, or at least 20 mm, or even higher. In afurther embodiment, the thickness of the body can be in a rangeincluding any of the minimum and maximum values noted herein.

In a further embodiment, the body can have a particular volume. Forexample, the body can include a volume of at least 50 cm³, at least 60cm³, at least 70 cm³, at least 80 cm³, at least 95 cm³, at least 100cm³, at least 108 cm³, at least 110 cm³, at least 120 cm³, at least 125cm³, at least 130 cm³, at least 135 cm³, or at least 140 cm³. In anotherinstance, the volume of the body can be at most 5000 cm³, at most 4500cm³, at most 4000 cm³, at most 3500 cm³, at most 3000 cm³, at most 2500cm³, at most 2000 cm³, at most 1500 cm³, at most 1000 cm³, at most 500cm³ at most 400 cm³, or at most 300 cm³. Moreover, the volume caninclude any of the minimum and maximum values noted herein, such as in arange from 50 cm³ to 5000 cm³.

In a further embodiment, the material can include an areal density of atleast 20.0 kg/m², at least 20.5 kg/m², at least 20.8 kg/m², at least20.9 kg/m², at least 21.0 kg/m², at least 21.2 kg/m², at least 21.5kg/m², or at least 21.8 kg/m². In yet another embodiment, the arealdensity can be at most 28.0 kg/m², such as at most 27.0 kg/m², or atmost 26.0 kg/m². Moreover, the areal density may be in a range includingany of the minimum and maximum values noted herein, such as in a rangefrom 20.0 kg/m² to 26.0 kg/m². The areal density can be determined bydividing the weight of the material by the area of the major surface ofthe body of the material. For instance, the major surface can be thesurface defined by the length and the width, wherelength>width>thickness. In another instance, the material can be used toform an armor component, such as a torso plate, the strike face would bethe major surface to determine the areal density of the torso plate.

In an embodiment, the material can include a V₅₀ ballistic limitdetermined in accordance with MIL-STD-662 using a projectile of 7.62mm×51 mm P80 and determined on the material having the thickness of 8.6mm (referred to as the first V₅₀ ballistic limit in this disclosure). Inan aspect, the first V₅₀ ballistic limit can be at least 710 m/s, atleast 720 m/s, at least 730 m/s, at least 740 m/s, or at least 750 m/s.In another aspect, the first V₅₀ ballistic limit can be at most 950 m/sor at most 930 m/s or at most 890 m/s or at most 850 m/s or at most 800m/s or at most 780 m/s or at most 755 m/s. Moreover, the first V₅₀ballistic limit can be in a range including any of the minimum andmaximum values noted herein.

In a further embodiment, the material can have a first average V₅₀ballistic limit (the first V₅₀ ballistic limit/the thickness of 8.6 mm).In an aspect, the first average V₅₀ ballistic limit can be at least 78.5m/s·mm, at least 79.0 m/s·mm, at least 80.0 m/s·mm, at least 81.0m/s·mm, at least 81.5 m/s·mm, at least 82.0 m/s·mm, at least 82.5m/s·mm, at least 83.0 m/s·mm, at least 84.0 m/s·mm, at least 84.5m/s·mm, at least 85.0 m/s·mm, at least 85.5 m/s·mm, at least 86.0m/s·mm, at least 87.0 m/s·mm, or at least 87.5 m/s·mm. In anotheraspect, the first average V₅₀ ballistic limit can be at most 110.5m/s·mm or at most 108 m/s·mm or at most 103.5 m/s·mm or 98.8 m/s·mm orat most 93 m/s·mm or at most 90 m/s·mm or at most 87.8 m/s·mm. Moreover,the first average V₅₀ ballistic limit can be in a range including any ofthe minimum and maximum values noted herein.

In a further embodiment, the material may include a V₅₀ ballistic limitdetermined in accordance with MIL-STD-662 using an AP8 projectile of7.62 mm×51 mm and determined on the body having a thickness of 8.6 mm(referred to as the second V₅₀ ballistic limit hereinafter). In anaspect, the second V₅₀ ballistic limit can be at least 710 m/s, at least720 m/s, at least 730 m/s, at least 740 m/s, at least 750 m/s, or atleast 760 m/s. In another aspect, the second V₅₀ ballistic limit can beat most 950 m/s or at most 930 m/s or at most 890 m/s or at most 850 m/sor at most 800 m/s or at most 780 m/s or at most 755 m/s. Moreover, thesecond V₅₀ ballistic limit can be in a range including any of theminimum and maximum values noted herein.

In a further embodiment, the material can have a second average V₅₀ballistic limit (the second V₅₀ ballistic limit/the thickness of 8.6 mm)of at least 79.0 m/s·mm, at least 80.0 m/s·mm, at least 81.0 m/s·mm, atleast 81.5 m/s·mm, at least 82.0 m/s·mm, at least 82.5 m/s·mm, at least83.0 m/s·mm, at least 84.0 m/s·mm, at least 84.5 m/s·mm, at least 85.0m/s·mm, at least 85.5 m/s·mm, at least 86.0 m/s·mm, at least 87.0m/s·mm, at least 87.5 m/s·mm, or 88.3 m/s·mm. In another embodiment, thematerial can include a second average V₅₀ ballistic limit of at most110.5 m/s·mm or at most 108 m/s·mm or at most 103.5 m/s·mm or 98.8m/s·mm or at most 93 m/s·mm or at most 90 m/s·mm or at most 87.8 m/s·mm.Moreover, the second average V₅₀ ballistic limit can be in a rangeincluding any of the minimum and maximum values noted herein.

In an embodiment, the material can be used to form an object, whereinthe object can have an average value of lattice constant a and averagelattice constant c. As used herein, average lattice constant is intendedto refer to an average of measurements of lattice constant of at least 5statistically relevant regions of the object. In a further embodiment,the object can have a standard deviation of lattice constant a and c ofthe statistically relevant regions.

In an embodiment, the object can be an armor component. In anotherembodiment, an armor component can include the material includingB₆O_(X). In a further embodiment, the armor component can be madeentirely of the body including B₆O_(X). In still another embodiment, thearmor component can be a composite including the body and at least oneadditional component. In an aspect, the additional component can includea material selected from the group consisting of metal, metal alloys,ceramics, glass, polymers, fabrics, or any combination thereof. Inanother aspect, the additional component can be a discrete structureseparate from the body and coupled to at least one surface of the body.FIG. 4 includes a cross-sectional illustration of a portion of acomposite armor component including a portion 401 that can be formedwith the body including B₆O_(X) and an additional component 402 that iscoupled to a major surface of the portion 301. In yet anotherembodiment, the armor component can be a composite having a multilayeredstructure including the body. FIG. 5 includes an illustration of anothercomposite armor component including a portion 401 that can be made ofthe body including B₆O_(X) and disposed between additional components402 and 403. It will be appreciated that various suitable arrangementsof the portion made of the body relative to other components arecontemplated and within the scope of the embodiments described herein.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described herein. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention. Embodiments may be in accordance with any one or moreof the embodiments as listed below.

EMBODIMENTS

Embodiment 1. A material, having a body comprising B₆O_(X), wherein theB₆O_(X) comprises lattice constant a and lattice constant c, wherein Arepresents a value of constant a, and C represents a value of constantc, wherein C is at most 12.318.

Embodiment 2. A material, having a body comprising B₆O_(X), wherein:

X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), Arepresents a value of lattice constant a, and C represents a value oflattice constant c; and

0.90≤X≤1.1.

Embodiment 3. A material, having a body comprising B₆O_(X), wherein:

X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), Arepresents a value of lattice constant a, and C represents a value oflattice constant c;

0.85≤X≤1.1; and

Xc is at least 0.90.

Embodiment 4. A material, having a body comprising:

a polycrystalline phase including B₆O_(X), wherein X=(Xa+Xc)/2, whereinXa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), A represents a value oflattice constant a, and C represents a value of lattice constant c, andwherein 0.85≤x≤1.1; andan at most 10 vol % of an amorphous phase for a total volume of thebody.

Embodiment 5. A material, having a body comprising B₆O_(X),

wherein:X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), Arepresents a value of lattice constant a, and C represents a value oflattice constant c, and wherein 0.85≤X≤1; andwherein the body comprises:a content of a compound including an element other than boron and otherthan oxygen of at most 5 wt % for a total weight of the body; anda percent of theoretical density of at least 90%.

Embodiment 6. A material, having a body comprising B₆O_(X),

wherein:X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), Arepresents a value of lattice constant a, and C represents a value oflattice constant c, and wherein 0.85≤X≤1; andwherein the body comprises a width of at least 10.0 cm.

Embodiment 7. The material of any one of embodiments 1 to 6, wherein Xis at least 0.90, at least at least 0.91, or at least 0.92, or at least0.93, or at least 0.94, or at least 0.95, or at least 0.96, or at least0.97, or at least 0.98, or at least 0.98, or at least 0.99, or at least1.0.

Embodiment 8. The material of any one of embodiments 1 to 6, wherein Xis at most 1.2, at most 1.1, at most 1.0, at most 0.99, at most 0.98, atmost 0.97, at most 0.96, or at most 0.95.

Embodiment 9. The material of any one of embodiments 1 to 6, wherein Xais at least 0.85, at least 0.87, at least 0.88, or at least 0.89, atleast 0.90, at least 0.91, at least 0.92, at least 0.93, at least 0.94,at least 0.95, at least 0.96, at least 0.97, at least 0.98, or at least0.99.

Embodiment 10. The material of any one of embodiments 1 to 6, wherein Xais at most 1.2, or at most 1.1, at most 1.05, at most 1.02, or at most1.0, or at most 0.99.

Embodiment 11. The material of any one of embodiments 1 to 6, wherein Xcis at least 0.85, at least 0.87, at least 0.88, or at least 0.89, atleast 0.90, at least 0.91, at least 0.92, at least 0.93, at least 0.94,at least 0.95, at least 0.96, at least 0.97, at least 0.98, or at least0.99.

Embodiment 12. The material of any one of embodiments 1 to 6, wherein Xcis at most 1.2, or at most 1.1, at most 1.05, at most 1.02, at most 1.0,or at most 0.99.

Embodiment 13. The material of any one of embodiments 1 to 6, whereineach of Xa and Xc is at least 0.90, or at least 0.91, or at least 0.92,or at least 0.93, or at least 0.94, or at least 0.95, or at least 0.96,or at least 0.97, or at least 0.98, or at least 0.98, or at least 0.99.

Embodiment 14. The material of any one of embodiments 1 to 6, whereineach of Xa and Xc is at most 1.20 or at most 1.10 or at most 1.05 or atmost 1.02.

Embodiment 15. The material of any one of embodiments 1 to 6, whereinthe A is at least 5.383, at least 5.384, at least 5.385, at least 5.386,at least 5.387, at least 5.388, at least 5.389, at least 5.390, at least5.391, at least 5.392, at least 5.393, at least 5.394, at least 5.395,at least 5.396, at least 5.397, at least 5.398, at least 5.399, at least5.400, at least 5.401.

Embodiment 16. The material of any one of embodiments 1 to 6, whereinthe C is at most 12.318, at most 12.317, at most 12.317, at most 12.316,at most 12.315, at most 12.314, at most 12.313, at most 12.312, at most12.311, at most 12.310, at most 12.309, at most 12.308, or at most12.307.

Embodiment 17. The material of any one of embodiments 1 to 6, whereinthe body comprises a polycrystalline phase including B₆O_(X) and at most10 vol % of an amorphous phase or at most 9 vol % or at most 8 vol % orat most 7 vol % or at most 6 vol % or at most 5 vol % or at most 4 vol %or at most 3 vol % or at most 2 vol % or at most 1 vol % of an amorphousphase for a total volume of the body.

Embodiment 18. The material any one of embodiments 1 to 6, wherein thebody comprises a polycrystalline phase including B₆O_(X) and wherein thepolycrystalline phase has a content of at least 85 vol %, at least 90vol %, at least 91 vol %, at least 92 vol %, at least 93 vol %, at least94 vol %, at least 95 vol %, at least 96 vol %, at least 97 vol %, atleast 98 vol %, or at least 99 vol % for a total volume of the body.

Embodiment 19. The material of any one of embodiments 1 to 6, whereinthe body consists essentially of a polycrystalline phase includingB₆O_(X).

Embodiment 20. The material of any one of embodiments 1 to 6, whereinthe body comprises at least 90 vol % B₆O_(X) for a total volume of thebody or at least 91 vol % or at least 92 vol % or at least 93 vol % orat least 94 vol % or at least 95 vol % or at least 96 vol % or at least97 vol % or at least 98 vol % or at least 99 vol % of B₆O_(X) for atotal volume of the body.

Embodiment 21. The material of any one of embodiments 1 to 6, whereinthe body is a monolithic form comprising B₆O_(X).

Embodiment 22. The material of any one of embodiments 1 to 6, whereinthe body consists essentially of B₆O_(X).

Embodiment 23. The material of any one of embodiments 1 to 6, whereinthe body comprises a content of a compound including an element otherthan boron and other than oxygen of at most 5 wt % for a total weight ofthe body or at most 4 wt % or at most 3 wt % or at most 2 wt % for thetotal weight of the body.

Embodiment 24. The material of any one of embodiments 1 to 6, whereinthe body is essentially free of an intentionally added sintering aid.

Embodiment 25. The material of any one of embodiments 1 to 6, whereinthe body comprises a percent of theoretical density of at least 91%, orat least 92%, or at least 93%, or at least 94%, or at least 95%, or atleast 96%, or at least 97%, or at least 98%, or at least 99%.

Embodiment 26. The material of any one of embodiments 1 to 6, whereinthe body comprises a Knoop hardness at 100 g of at least 2700 kg/mm², atleast 2800 kg/mm², at least 2900 kg/mm², at least 3000 kg/mm², or atleast 3100 kg/mm².

Embodiment 27. The material of any one of embodiments 1 to 6, whereinthe body comprises a Knoop hardness at 100 g of at most 4500 kg/mm², atmost 4200 kg/mm², at most 4000 kg/mm², at most 3900 kg/mm², at most 3800kg/mm², at most 3700 kg/mm², at most 3600 kg/mm², at most 3500 kg/mm²,or at most 3400 kg/mm².

Embodiment 28. The material of any one of embodiments 1 to 6, whereinthe body comprises an average density of at least 2.00 g/cm³ or at least2.10 g/cm³ or at least 2.20 g/cm³ or at least 2.30 g/cm³ or at least2.40 g/cm³ and at most 2.63 g/cm³.

Embodiment 29. The material of any one of embodiments 1 to 6, whereinthe body comprises a volume of at least 108 cm³, at least 110 cm³, atleast 120 cm³, at least 125 cm³, at least 130 cm³, at least 135 cm³, orat least 140 cm³ and not greater than 250 cm³.

Embodiment 30. The material of any one of embodiments 1 to 6, whereinthe body comprises a length, a width, and a thickness, and whereinlength>width and the width>thickness.

Embodiment 31. The material of embodiment 30, wherein the length is atleast 10.5 cm or at least 11 cm or at least 12 cm or at least 15 cm orat least 18 cm.

Embodiment 32. The material of embodiment 30, wherein the length is notgreater than 50 cm.

Embodiment 33. The material of embodiment 30, wherein the width is atleast 10.5 cm or at least 11 cm or at least 12 cm or at least 15 cm orat least 18 cm.

Embodiment 34. The material of embodiment 30, wherein the width is notgreater than 50 cm.

Embodiment 35. The material of embodiment 30, wherein the thickness isat most 12 mm or at most 11 mm or at least 10 mm or at most 8 mm or atmost 7 mm or at most 6 mm or at most 5 mm.

Embodiment 36. The material of any one of embodiments 1 to 6, whereinthe body comprises an areal density of at least 20.0 kg/m², at least20.5 kg/m², at least 20.8 kg/m², at least 20.9 kg/m², at least 21.0kg/m², at least 21.2 kg/m², at least 21.5 kg/m², or at least 21.8 kg/m²,and at most 26.0 kg/m².

Embodiment 37. The material of any one of embodiments 1 to 6, whereinthe body comprises an average V₅₀ ballistic limit (V₅₀ ballisticlimit/thickness of the body) of at least 78.5 m/s·mm, at least 79.0m/s·mm, at least 80.0 m/s·mm, at least 81.0 m/s·mm, at least 81.5m/s·mm, at least 82.0 m/s·mm, at least 82.5 m/s·mm, at least 83.0m/s·mm, at least 84.0 m/s·mm, at least 84.5 m/s·mm, at least 85.0m/s·mm, at least 85.5 m/s·mm, at least 86.0 m/s·mm, at least 87.0m/s·mm, or at least 87.5 m/s·mm.

Embodiment 38. The material of any one of embodiments 1 to 6, whereinthe body comprises an average V₅₀ ballistic limit (V₅₀ ballisticlimit/thickness of the body) of at most 110.5 m/s·mm or at most 108m/s·mm or at most 103.5 m/s·mm or 98.8 m/s·mm or at most 93 m/s·mm or atmost 90 m/s·mm or at most 87.8 m/s·mm.

Embodiment 39. An armor component, comprising a body including B₆O_(X),wherein X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347,Xc=(C−12.410)/(−0.10435), A represents a value of lattice constant a,and C represents a value of lattice constant c, and wherein 0.85≤x≤1.1.

Embodiment 40. The armor component of embodiment 39, wherein the bodyfurther comprises at least one of the following:

Xc is at least 0.89;A is at least 5.396;C is at most 12.318;a polycrystalline phase including B₆O_(X) and an at most 10 vol % of anamorphous phase for a total volume of the body;a compound including an element other than boron and other than oxygenof at most 5 wt % for a total weight of the body and at least 90% of atheoretical density; anda compound including an element other than boron and other than oxygenof at most 5 wt % for a total weight of the body and a hardness of aKnoop hardness at 100 g of at least 2700 kg/mm².

Embodiment 41. The armor component of embodiment 39 or 40, wherein thebody comprises at least 90 vol % B₆O_(X) for a total volume of the body,or at least 91 vol % or at least 92 vol % or at least 92 vol % or atleast 93 vol % or at least 94 vol % or at least 95 vol % or at least 96vol % or at least 97 vol % or at least 98 vol % or at least 99 vol %.

Embodiment 42. The armor component of embodiment 39 or 40, wherein thebody consists essentially of B₆O_(X).

Embodiment 43. The armor component of embodiment 39 or 40, wherein thebody comprises a Knoop hardness at 100 g of at least 2700 kg/mm², atleast 2800 kg/mm², at least 2900 kg/mm², at least 3000 kg/mm², or atleast 3100 kg/mm².

Embodiment 44. The armor component of embodiment 39 or 40, wherein thebody comprises a Knoop hardness at 100 g of at most 4500 kg/mm², at most4200 kg/mm², at most 3900 kg/mm², at most 3800 kg/mm², at most 3700kg/mm², at most 3600 kg/mm², at most 3500 kg/mm², or at most 3400kg/mm².

Embodiment 45. The armor component of embodiment 40 or 41, wherein thebody comprises an areal density of at least 20.0 kg/m², at least 20.5kg/m², at least 20.8 kg/m², at least 20.9 kg/m², at least 21.0 kg/m², atleast 21.2 kg/m², at least 21.5 kg/m², or at least 21.8 kg/m², and atmost 26.0 kg/m².

Embodiment 46. The armor component of embodiment 40 or 41, wherein thebody comprises wherein the body comprises an average V₅₀ ballistic limit(V₅₀ ballistic limit/thickness of the body) of at least 78.5 m/s·mm, atleast 79.0 m/s·mm, at least 80.0 m/s·mm, at least 81.0 m/s·mm, at least81.5 m/s·mm, at least 82.0 m/s·mm, at least 82.5 m/s·mm, at least 83.0m/s·mm, at least 84.0 m/s·mm, at least 84.5 m/s·mm, at least 85.0m/s·mm, at least 85.5 m/s·mm, at least 86.0 m/s·mm, at least 87.0m/s·mm, or at least 87.5 m/s·mm.

Embodiment 47. The armor component of embodiment 39 or 40, wherein thebody comprises an average V₅₀ ballistic limit (V₅₀ ballisticlimit/thickness of the body) of at most 87.8 m/s·mm.

Embodiment 48. The armor component of embodiment 39 or 40, wherein thearmor component is made entirely of the body.

Embodiment 49. The armor component of embodiment 39 or 40, wherein thearmor component is a composite including the body and at least oneadditional component.

Embodiment 50. The armor component of embodiment 49, wherein at leastone additional component comprises a material selected from the groupconsisting of metal, metal alloys, ceramics, glass, polymers, fabrics,or any combination thereof.

Embodiment 51. The armor component of embodiment 49, wherein the atleast one additional component is a discrete structure separate from thebody and coupled to at least one surface of the body.

Embodiment 52. The armor component of embodiment 49, wherein thecomposite is a multilayered structure.

Embodiment 53. The material or armor component of any one of embodiments1 to 6, 39, and 40, wherein the body is essentially free of carbides,nitrides, borides, or any combination thereof.

Embodiment 54. The material or armor component of any one of embodiments1 to 6, 39, and 40, wherein the body is essentially free of alkalineelements, transition metal elements, rare earth elements, or anycombination thereof.

Embodiment 55. A method, comprising forming a material including a bodyincluding B₆O_(X), wherein X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347,Xc=(C−12.410)/(−0.10435), A represents a value of lattice constant a,and C represents a value of lattice constant c, and wherein 0.85≤X≤1.1,and wherein the body further includes at least one of the following:

X being at least 0.90;Xc being at least 0.89;C is at most 12.318;a polycrystalline phase including B₆O_(X) and an at most 10 vol % of anamorphous phase for a total volume of the body;a compound including an element other than boron and other than oxygenof at most 5 wt % for a total weight of the body and at least 90% of atheoretical density; anda compound including an element other than boron and other than oxygenof at most 5 wt % for a total weight of the body and a hardness of aKnoop hardness at 100 g of at least 2700 kg/mm².

Embodiment 56. The method of embodiment 55, further comprising forming apowder material including B₆O_(X) without applying an exogenous force.

Embodiment 57. The method of embodiment 55, further comprising disposinga sealant layer over the powder material, wherein the sealant layercomprises a first material in a form of powder.

Embodiment 58. The method of embodiment 57, further comprising disposinga release layer between the powder material and the sealant layer,wherein the release layer comprises the first material.

Embodiment 59. The method of embodiment 57, further comprising applyinga heat or pressure to the powder material to form the body.

Embodiment 60. A method of forming a material having a body, comprising:

disposing a powder material in an apparatus;disposing a first barrier layer along a side of the powder material,wherein the first barrier layer comprises a metal element;disposing a release layer such that the release layer is between thebarrier layer and the side of the powder material,wherein the release layer comprises the first material; andapplying a heat or a pressure to the powder.

Embodiment 61. The method of embodiment 60, further comprising a sealantlayer over the powder material, wherein the sealant material comprisesthe first material.

Embodiment 62. The method of any of embodiments 57 to 59 and 61, whereinthe sealant layer has a thickness at least 3 mm and at 10 mm.

Embodiment 63. The method embodiment 60, wherein the release layerextends over an entire thickness of the compacted powder material.

Embodiment 64. The method of embodiment 57 to 60, wherein the firstmaterial comprises a nitride.

Embodiment 65. The method of embodiment 61, further comprising disposinga second barrier layer between the bottom surface of the first plungerand the sealant layer.

Embodiment 66. The method of embodiment 61, wherein the first barrierlayer is disposed such that the first barrier layer extends over alength of the release layer and over a thickness of the sealant layer.

Embodiment 67. The method of embodiment 60, wherein the first barrierlayer comprises a foil.

Embodiment 68. The method of embodiment 55 or 60, wherein the powdermaterial comprises B₆O_(X), wherein x is at least 0.9 and at most 1.1.

Embodiment 69. The method of embodiment 55 or 60, wherein the bodycomprises B₆O_(X), wherein X is at least 0.9 and at most 1.1.

Embodiment 70. The method of embodiment 69, wherein the body comprisesat least 90 vol % or at least 91 vol % or at least 92 vol % or at least92 vol % or at least 93 vol % or at least 94 vol % or at least 95 vol %or at least 96 vol % or at least 97 vol % or at least 98 vol % or atleast 99 vol % for a total volume of the body.

Embodiment 71. An apparatus, comprising:

a first plunger having a bottom surface;a spacer disposed at the bottom surface of the first plunger; anda barrier layer extending over a side surface and a bottom surface ofthe spacer.

Embodiment 72. The apparatus of embodiment 71, further comprising asealant layer underlying the barrier layer, wherein the sealant layercomprises a different material than the barrier layer.

Embodiment 73. The apparatus of embodiment 71, wherein the barrier layercomprises a metal element.

Embodiment 74. The apparatus of embodiment 71, further comprising amold, wherein the barrier layer is disposed along an inner surface ofthe mold.

Embodiment 75. The apparatus of embodiment 71, further comprising asecond plunger coaxially aligned with the first plunger.

Embodiment 76. The apparatus of embodiment 75, further comprising secondspacer disposed at an upper surface of the second plunger, wherein thebarrier layer extends over a side surface and an upper surface of thesecond spacer.

Embodiment 77. The apparatus of embodiment 71, wherein the apparatuscomprises a hot press.

EXAMPLES Example 1

A representative sample S was formed in accordance with embodimentsdisclosed herein. Briefly, amorphous boron powder and crystalline boricanhydride (B₂O₃) powder was mixed at the ratio 2.48 of boron to B₂O₃ (bymass). Prior to mixing, B₂O₃ was ball milled down to a particle sizeless than 125 um. The powders were mixed utilizing an acoustic mixerwith the vibration intensity set to 80 g's and the vibration time to oneminute. The cycles were repeated for four times. The blended powder wasput in a graphite furnace and sintering was performed in the atmosphereof argon. The temperature of the furnace was first set at 600° C. andramped up at 4° C./min from the room temperature. The mixture was heatedat 600° C. for 30 minutes, and then the temperature of the furnace wasfurther increased to 1400° C. at 10° C./min. The mixture was furtherheated at 1400° C. for 60 minutes and then allowed to cool down untilthe furnace returned to the room temperature. The B₆O_(X) powder wasformed. It was then removed from the crucible, milled and sieved toobtain an average particle size not greater than 1 micron.

Then the mold was set up as illustrated in FIG. 2 and disclosed inembodiments herein. A tantalum foil was used as the barrier film. 50 gboron nitride was used to form each sealant layer. Boron nitride releasetapes were disposed to separate the sealant layers from the B₆O_(X)powder layer. Boron nitride release paint was applied to the tantalumfoil to separate the tantalum foil from the B₆O_(X) powder layer. Theplunger and spacer had a diameter of 4 inches. Hot pressing wasconducted utilizing the parameters included in Table 1 to form sample S.

TABLE 1 Type Temperature Time Atmosphere Load (lbs) Ramp Room T to 4°C./min Vacuum 2300 600° C. Hold  600° C. 30 minutes Vacuum 2300 Ramp600° C. to 10° C./min Vacuum 2300 1200° C. Switch Gas to Argon Ramp 1200to 4° C./min Argon 41500 2000° C. Hold 2000° C. 30 minutes Argon 41500Ramp 2000° C. to 10° C./min Argon Remove Room T Pressure

Another sample, C1, was formed in the same manner as disclosed above toform sample S, except that the mixture of boron and B₂O₃ powders wasplaced in the mold (replacing the B₆O_(X) powder layer illustrated inFIG. 2 with the mixture) to directly form the sample from the rawmaterials and hot pressing was performed using the parameters in Table2. Sample C2 was formed in the same manner as disclosed above to formsample S, except that hot pressing was performed using the parametersincluded in Table 3. Lattice constants a and c, Xa, Xc, and X of thesamples are included in Table 4 below.

TABLE 2 Type Temperature Time Atmosphere Load (lbs) Ramp Room T to 15°C./min Vacuum 12000 100° C. Hold  100° C. 20 min Vacuum 12000 Ramp 100°C. to 15° C./min Vacuum 12000 500° C. Switch Gas to Argon Hold  500° C.20 min Argon 12000 Ramp 500° C. to 12.5° C./min Argon 12000 1200° C.Ramp 1200° C. to 4° C./min Argon 12000 1500° C. Ramp 1500° C. to 8°C./min Argon 12000 1800° C. Hold 1800° C. 5 min Argon 41500 Ramp 1800°C. to 8° C./min Argon 41500 2030° C. Hold 2030° C. 20 min Argon 41500Ramp 2030° C. to 50° C./min Argon 24000 1700° C. Ramp 1700° C. to 50°C./min Argon 24000 20° C.

TABLE 3 Type Temperature Time Atmosphere Load (lbs) Ramp Room T to 20°C./min Vacuum 2300 100° C. Hold  100° C. 20 min Vacuum 2300 Ramp 100° C.to 20° C./min Vacuum 2300 1000° C. Switch Gas to Argon Hold 1000° C. 5min Argon 14000 Ramp 1000° C. to 12.5° C./min Argon 41500 1900° C. Hold1900° C. 5 min Argon 41500 Ramp 1900° C. to 8° C./min Argon 41500 2030°C. Hold 2030° C. 15 min Argon 41500 Ramp 2030° C. to 50° C./min Argon41500 1000° C. Ramp 1000° C. to 50° C./min Argon Remove 20° C. pressure

TABLE 4 A C X Sample (angstroms) (angstroms) Xa Xc [(Xa + Xc)/2] S 5.40112.307 1.020 0.992 1.006 C1 5.382 12.323 0874 0.836 0.855 C2 5.38412.324 0.894 0.824 0.859

Example 2

Additional representative samples S2 and S3 were formed in the samemanner as described above with respect to sample S. V₅₀ ballistic limitwas tested on samples S2 and S3 and Hexoloy® SA SiC samples C2 to C5(commercially available from Saint-Gobain Performance Ceramics &Refractories) using projectile P80 and AP8 as described in embodimentsof this disclosure. Test results and properties of the samples areincluded in Table 5 below.

TABLE 5 Average Areal V₅₀ Thickness Density Density ballistic SamplesProjectile (mm) g/cm³ kg/m² limit m/s C2 P80 7 3.15 22.05 779 C3 P80 6.73.15 21.105 752 S2 P80 8.6 2.56 22.016 755 S3 AP8 8.6 2.56 22.016 765 C4AP8 7.1 3.15 22.365 765 C5 AP8 7.0 3.15 22.05 744

Example 3

Additional representative samples S4, S5, and S6 were formed in the samemanner as sample S1, except hot pressing was performed using theparameters included in Table 2. Knoop hardness at 100 g was tested. Anaverage of 5 tests for each sample is included in Table 6.

TABLE 6 Samples Average Knoop Hardness at 100 g GPa Standard DeviationS4 31.322 1.3091 S5 32.4061 0.6233 S6 32.9817 1.7348

The foregoing embodiments are directed to a material made of boronsuboxide, and particularly boron suboxide with improved stoichiometryand purity, which represent a departure from the state-of-the-art. Thoseof skill in the art recognize that it is difficult to formstoichiometric boron suboxide, as the raw materials, boron and boronoxide, are highly reactive under temperatures suitable for performinghot pressing.

While some publications have remarked that B₆O_(X) specimens can be madeto be near stoichiometry, the specimens disclosed in those publicationswere analyzed using weight contents of boron and oxygen in the specimen,which is believed by the skilled artisan to be not as accurate asmeasurements based on crystalline structure parameters, such as latticeconstant a and c. Table 7 below includes values of lattice constants aand c, Xa, Xc, and X determined by lattice constants a and c provided bysome prior art references. Table 8 includes weight contents used by theprior art references to determine stoichiometry and the “X” valuesgenerated therefrom (referred to as X′ hereinafter).

TABLE 7 Source of A C X Sample (angstroms) (angstroms) Xa Xc [(Xa +Xc)/2] Rizzo * 5.395 12.342 0.972 0.653 0.813 Petrack ** 5.386 12.3260.905 0.806 0.855 * Rizzo, H. F., et al., “The Existence and Formationof the Solid B6O”, Journal of the Electrochemical Society, Vol. 109, No.11, 1079-1082 (November 1962). ** Petrack, D. R., et. al., “Preparationand Characterization of Boron Suboxide”, National Bureau of StandardsSpecial Publication 364, Solid State Chemistry, Proceedings of 5^(th)Materials Research Symposium, July, 1972.

TABLE 8 Source of B O B O X′ (mol % of Sample (wt %) (wt %) (mol %) (mol%) B to mol % of O) Rizzo 77.85 19.90 85.28 14.72 0.966 Petrack 79.7020.70 85.08 14.92 0.951

Discrepancies of the values of X and X′ can be observed between Tables 7and 8. It should be noted when using the weight contents of boron andoxygen to determine X′ in a specimen that includes elemental boronand/or oxygen in a phase other than the boron suboxide phase, thecontents of boron and oxygen may be skewed, because the phase may not bedetected by X-ray, which would cause the boron and/or the oxygen in thatphase to be taken into consideration for determining X′. Latticeconstants a and c, Xa, and Xc are crystallography features of B₆O_(X),which are not be affected by the presence of a non-B₆O_(X) phase havingelemental boron or oxygen. When both approaches are used to analyzestoichiometry of a B₆O_(X) sample, and X and X′ values are notconsistent, it should be considered that a different phase containingelemental boron and/or oxygen may be present in the sample and analysisbased on lattice constants is likely to be accurate.

In this disclosure, stoichiometry of B₆O_(X) is described based onlattice constants a and c of the B₆O_(X) phase only and X is the averageof Xa and Xc. The material disclosed in embodiments of this disclosurehas X in a range from 0.90 to 1, determined based on lattice constants aand c. The forming process noted in this disclosure, such as taking anextra step to form B₆O_(X) powder prior to the use of a hot press, incombination with the uses of the barrier film, sealant layer, and/orrelease layers, contributes to formation of the B₆O_(X) having improvedstoichiometry and properties.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims. Reference herein to a materialincluding one or more components may be interpreted to include at leastone embodiment wherein the material consists essentially of the one ormore components identified. The term “consisting essentially” will beinterpreted to include a composition including those materialsidentified and excluding all other materials except in minority contents(e.g., impurity contents), which do not significantly alter theproperties of the material. Additionally, or in the alternative, incertain non-limiting embodiments, any of the compositions identifiedherein may be essentially free of materials that are not expresslydisclosed. The embodiments herein include range of contents for certaincomponents within a material, and it will be appreciated that thecontents of the components within a given material total 100%.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

1. (canceled)
 2. A material, having a body comprising B₆O_(X), wherein:X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), Arepresents a value of lattice constant a, and C represents a value oflattice constant c; and 0.85≤X≤1.2.
 3. The material of claim 2, whereinthe body comprises a length, a width, and a thickness.
 4. The materialof claim 3, wherein the length is greater than the width and thethickness.
 5. The material of claim 2, wherein the body comprises avolume of at least 108 cm3.
 6. The material of claim 2, wherein Xc is atleast 0.89.
 7. The material of claim 2, wherein A is at least 5.396. 8.The material of claim 2, wherein C is at most 12.318.
 9. An armorcomponent, comprising a body including the material of claim
 2. 10. Thematerial of claim 2, wherein the body has: a minimum thickness of 2 mm;a width of at least 10.0 cm; or a combination thereof.
 11. A material,having a body comprising: a length, a width, and a thickness; andB₆O_(X), wherein the B₆O_(X) comprises lattice constant a and latticeconstant c, wherein A represents a value of constant a, and C representsa value of constant c, wherein C is at most 12.318.
 12. The material ofclaim 11, wherein X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347,Xc=(C−12.410)/(−0.10435), A represents a value of lattice constant a,and C represents a value of lattice constant c, and wherein 0.85≤X≤1.2.13. The material of claim 11, wherein the body is essentially free of anintentionally added sintering aid.
 14. The material of claim 11, whereinthe body comprises at most 5 wt % of a compound including an elementother than boron and other than oxygen for a total weight of the body.15. The material of claim 11, wherein the body has a percent oftheoretical density of at least 90%.
 16. The material of claim 11,wherein A is at least 5.383.
 17. The material of claim 11, wherein thebody comprises at most 10 vol % of an amorphous phase for a total volumeof the body.
 18. The material of claim 17, wherein the amorphous phaseis at most 5 vol % for the volume f the body.
 19. The material of claim11, wherein the body comprises a polycrystalline phase in a content ofat least 97 vol % for the total volume of the body, wherein thepolycrystalline phase comprises B₆O_(X).
 20. The material of claim 11,wherein the thickness is at least 2 mm.
 21. The material of claim 11,wherein the length is greater than the thickness.